PECVD microcrystalline silicon germanium (SiGe)

摘要

Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.

主权项

1. A method for forming a silicon germanium layer, comprising:
depositing a seed silicon germanium layer over a substrate using plasma enhanced chemical vapor deposition (PECVD), wherein the substrate has a first temperature that is less than 450 degrees Celsius during processing, wherein the PECVD for depositing the seed silicon germanium layer has an RF power between about 300 W and about 600 W; and depositing a bulk silicon germanium layer directly on the seed silicon germanium layer using PECVD, wherein the substrate has a second temperature that is less than 450 degrees Celsius during processing, wherein the PECVD for depositing the bulk silicon germanium layer has an RF power between about 600 W and about 800 W.