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发明名称
Verfahren zur Herstellung begrabener Oxidschichten in einem Silizium-Wafer
摘要
申请公布号
DE69408671(T2)
申请公布日期
1998.06.18
申请号
DE19946008671T
申请日期
1994.09.23
申请人
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO, CATANIA, IT
发明人
CAMPISANO, SALVATORE UGO, I-95100 CATANIA, IT;RAINERI, VITO, I-95030 MASCALUCIA (PROV. OF CATANIA), IT
分类号
H01L21/02;H01L21/265;H01L21/316;H01L21/762;H01L27/12;(IPC1-7):H01L21/76
主分类号
H01L21/02
代理机构
代理人
主权项
地址
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