Method of manufacturing a semiconductor device comprising a field effect transistor and a capacitor.

摘要

A method of manufacturing a semiconductor device comprising a semiconductor body (1), which is provided with a capacitor having first and second capacitance electrodes (21, 22). The first capacitance electrode (21) and the gate electrode (22) are both made of a polycrystalline silicon layer. According to the invention, after source and drain zones (31, 32) of the transistor have been formed on either side of the gate electrode (34) in the semiconductor body (1), a metal layer is provided, which is separated by a dielectric layer (20) from the first capacitance electrode (21). By means of a heat treatment, the second capacitance electrode (22) is formed from the metal layer on the dielectric layer and this second capacitance electrode comprises a high melting-point metal compound. In the same processing step, the source and/or the drain zone (31, 32) are provided with a connection electrode (35, 36), which consists at least in part of metal silicide.