| 摘要 |
The present invention relates to a method for preparing pure graphene and natural semiconductive phosphorene. The method according to the present invention comprises the steps of: A. introducing any one selected from a) pure graphite flake and b) compact densified specimen obtained by solidifying pure expanded graphite flake, pure graphite powder, or pure expanded graphite powder into a solvent, and carrying out liquid phase pulse laser ablation to obtain pure graphene having a uniform size more simply and rapidly; B. introducing any one selected from c) black phosphor flake and d) compact densified specimen obtained by solidifying expanded black phosphor flake, black phosphor powder or expanded black phosphor powder into a solvent, and carrying out liquid phase pulse laser ablation to obtain natural semiconductive phosphorene having a uniform size more simply and rapidly; C. binding the pure graphene with phosphorene obtained by liquid phase pulse laser ablation to obtain more effective phorene-graphene showing properties of graphene in addition to phosphorene; D. further binding nanowires suitable for the use of phorene-graphene thereto to obtain phorene-graphene nanowires; E. obtaining phorene-graphene nanowire aerogel; and F. obtaining a phorene-graphene silver nanowire substrate. |
