| 摘要 |
PROBLEM TO BE SOLVED: To prevent abnormal growth and oxygen vacancy generated when forming the upper electrode of a ferroelectric capacitor with a conductive oxide film having a low degree of oxidation and a conductive oxide film having a high degree of oxidation. SOLUTION: A semiconductor device comprises: lower interlayer insulation films 11-13 for covering a MOS transistor formed on a semiconductor substrate 1; a ferroelectric capacitor that is formed at the upper portion of the lower interlayer insulation film, and has a lower electrode 26, an oxide ferroelectric film 37, a first upper electrode that is formed on the ferroelectric film 37, and is formed by a conductive oxide where a stoichiometry composition and an actual composition are expressed by AO<SB>x1</SB>and AO<SB>x2</SB>, respectively, a second upper electrode formed by a conductive oxide of y2/y1>x2/x1 where the stoichiometry composition and actual composition are expressed by BO<SB>y1</SB>and BO<SB>y2</SB>, respectively, and a third upper electrode having a composition containing a noble metal; and a multilayer interconnection structure that is formed on the lower interlayer insulation film while covering the ferroelectric capacitor, and includes an interlayer insulation film 43 and wiring 28. COPYRIGHT: (C)2008,JPO&INPIT
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