HALL ELEMENT

摘要

Provided is a Hall element which is integrated on a substrate to simultaneously detect a horizontal-direction magnetic field and a vertical-direction magnetic field which can be offset-cancelled by a spinning switch which switches a spinning current. The Hall element includes a P-type semiconductor substrate layer (100) made of P-type silicon; a vertical magnetic field detection N-type impurity region (110) which is formed on the P type semiconductor substrate layer; and eight horizontal magnetic field detection N-type impurity regions (120, 121) which are symmetrically arranged and surround the vertical magnetic field detection N-type impurity region. The Hall element has a four-time rotating shaft.