| 摘要 |
The invention relates to a method for producing buried semiconductor components and structured semiconductor bodies thus produced. By means of suitable dosing methods, contact and separation zones are produced in a substrate and/or in a series of semiconductor layers. Subsequently, a trench is etched in the structured semiconductor body in such a way, that semiconductor layers selectively grown in the trench can be contacted via lateral contact zones to electrical connections arranged in planar fashion on the surface of the semiconductor body. By this means, diverse semiconductor components may be arranged in a space-saving manner in a semiconductor body.
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