发明名称 Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates
摘要 In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.
申请公布号 US9397038(B1) 申请公布日期 2016.07.19
申请号 US201514633746 申请日期 2015.02.27
申请人 Invensas Corporation 发明人 Uzoh Cyprian Emeka;Woychik Charles G.;Sitaram Arkalgud R.;Shen Hong;Sun Zhuowen;Wang Liang;Gao Guilian
分类号 H01L21/44;H01L23/04;H01L23/52;H01L23/522;H01L49/02;H01L21/768 主分类号 H01L21/44
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A microelectronic component comprising: a substrate comprising a top surface, a bottom surface, and one or more first through-holes, each first through-hole passing between the top surface and the bottom surface; one or more conductive vias protruding from the one or more first through-holes to form at each first through-hole a conductive protrusion above the substrate; for each conductive protrusion protruding from a corresponding first through-hole, a first conductive sleeve region wrapping around the conductive protrusion and extending at least along a segment of the conductive protrusion, the first conductive sleeve region being electrically insulated from any conductive protrusion protruding from the first through-hole above the substrate, the first conductive sleeve region comprising an inner surface facing the conductive protrusion, an outer surface opposite to the inner surface, and a thickness which is a distance between the inner and outer surfaces, a maximum value of the thickness being smaller than a length of the inner surface measured along the segment.
地址 San Jose CA US