发明名称 FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a FET which is equipped with an electrode for electric field control of high output and operating with high efficiency and whose distortion property is improved. SOLUTION: In a FET which has a gate electrode 5, a source electrode 7, and a drain electrode 8, an RC circuit consisting of a resistor 11 and a MIM capacitor 10 is provided in series between a gate bus bar 4 for collecting gate electrode fingers and an electrode bus bar 12 for electric field control for collecting electrodes 9 for electric field control, and the gate electrode bus bar 4 and the electrode bus bar 12 for electric field control are connected with each other. A resistor 11 attenuates the amplitude of the voltage of the electrode 9 for electric field control less than the amplitude of the voltage of the gate electrode 5, and the capacitor blocks the DC voltage between the electrode 9 for electric field control and the gate electrode 5, and bias can be applied independent of the gate electrode 5.
申请公布号 JP2001326335(A) 申请公布日期 2001.11.22
申请号 JP20000146260 申请日期 2000.05.18
申请人 NEC CORP 发明人 TAKAHASHI HIDETADA
分类号 H01L27/06;H01L21/06;H01L21/338;H01L21/8232;H01L27/095;H01L29/812;(IPC1-7):H01L27/095;H01L21/823 主分类号 H01L27/06
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