发明名称 Multichip press-contact power semiconductor device
摘要 <p>A semiconductor device is provided which includes a plurality of semiconductor units each including a semiconductor chip, a support plate, a contact terminal block and a positioning guide, a flat package including a pair of common electrode plates and an insulating outer sleeve, and positioning and thermal-stress reducing means for positioning the support plates of the semiconductor elements in a horizontal direction, without interfering with the positioning guides, and reducing a thermal stress applied to a peripheral portion of a contact interface between the contact terminal block and the semiconductor chip due to heat generated during intermittent flow of current through a load. The contact terminal block is disposed on a first main electrode of the semiconductor chip, while the support plate is secured to a second main electrode of the chip, such that the semiconductor chip is placed under pressure between the contact terminal block and support plate that also serve as conductors and heat radiators. The semiconductor units are incorporated in the flat package, such that the pair of common electrode plates are in pressure contact with the contact terminal blocks and the support plates, respectively, of all of the semiconductor units. <IMAGE></p>
申请公布号 EP0962973(B1) 申请公布日期 2001.09.12
申请号 EP19990110583 申请日期 1999.06.01
申请人 FUJI ELECTRIC CO., LTD. 发明人 YAMAZAKI, KAZUAKI;TAKAHASHI, YOSHIKAZU
分类号 H01L25/07;H01L23/051;H01L23/48;H01L25/11;H01L25/18;H01L29/78;(IPC1-7):H01L23/051 主分类号 H01L25/07
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