Bipolar transistor including lateral suppression diode

摘要

A transistor includes an emitter of a first conductivity type, base of a second conductivity type, collector of the first conductivity type, and cathode of a lateral suppression diode. The emitter is disposed at a top surface of the transistor and configured to receive electrical current from an external source. The base is configured to conduct the electrical current from the collector to the emitter. The base is disposed at the top surface of the transistor and laterally between the emitter and the collector. The collector is configured to attract and collect minority carriers from the base. The cathode of the first conductivity type is surrounded by the base and disposed between the emitter and the collector, and the cathode is configured to suppress a lateral flow of the minority carriers from the base to the collector.

主权项

1. A transistor comprising:
an emitter of a first conductivity type disposed at a top surface of the transistor and configured to conduct an electrical current associated from an external source; a base of a second conductivity type configured to conduct the electrical current between a collector of the first conductivity type and the emitter, the base disposed at the top surface of the transistor and laterally between the emitter and the collector; the collector configured to attract and collect minority carriers from the base, and a cathode of the first conductivity type surrounding the base and disposed between the emitter and the collector, the cathode configured to suppress a lateral flow of the minority carriers from the base to the collector, wherein the cathode is ohmically coupled to a positive voltage supply relative to a voltage of the base, the positive voltage supply being less than a voltage of the collector.