Semiconductor construct and manufacturing method thereof as well as semiconductor device and manufacturing method thereof

摘要

A semiconductor construct includes a semiconductor substrate and connection pads provided on the semiconductor substrate. Some of the connection pads are connected to a common wiring and at least one of the remaining of the connection pads are connected to a wiring. The construct also includes a first columnar electrode provided to be connected to the common wiring and a second columnar electrode provided to be connected to a connection pad portion of the wiring.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including integrated circuits formed on an upper surface of the semiconductor substrate; connection pads which are connected to the integrated circuits provided on the semiconductor substrate, the connection pads comprising common power supply voltage connection pads, common ground voltage connection pads, and normal voltage connection pads; an insulating film formed on the semiconductor substrate and having openings in regions corresponding to the connection pads; a first common wiring serving for a power supply voltage and provided solidly on the insulating film so as to be connected to the common power supply voltage connection pads via corresponding openings in the insulating film; a second common wiring serving for a ground voltage and provided solidly on the insulating film so as to be connected to the common ground voltage connection pads via corresponding openings in the insulating film; and at least two normal wirings each provided on the insulating film so as to be connected to a normal voltage connection pad among the normal voltage connection pads via a corresponding opening in the insulating film, wherein the insulating film consists of one layer or not less than two layers, and at least one of the layers is a passivation layer, and wherein one of the first common wiring and the second common wiring has a part formed in a planar shape.