| 摘要 |
A semiconductor device is provided which realizes speed-up and cost reduction. The semiconductor device has a high side gate driver including a depression type FET and an enhancement type FET, a low side gate driver including a depression type FET and an enhancement type FET, and a high side power FET and a low side power FET as field-effect transistors, in which the high side gate driver, the low side gate driver, the high side power FET and the low side power FET are integrated in the same chip. |
| 主权项 |
1. A semiconductor device comprising:
a first gate driver and a second gate driver each including a depression type transistor as a field-effect transistor and a first enhancement type transistor as a field-effect transistor, and a first power transistor and a second power transistor as field-effect transistors, wherein a source terminal of the first power transistor and a drain terminal of the second power transistor are connected, a drain terminal of the first power transistor is connected to a power supply, a source terminal of the second power transistor is grounded, an output terminal of the first gate driver is connected to a gate terminal of the first power transistor, a ground terminal of the first gate driver is connected to the source terminal of the first power transistor, an output terminal of the second gate driver is connected to a gate terminal of the second power transistor, a ground terminal of the second gate driver is connected to the source terminal of the first power transistor, and the first gate driver, the second gate driver, the first power transistor and the second power transistor are integrated in the same chip. |
