| 发明名称 |
WIRING STRUCTURE OF SEMICONDUCTOR DEVICE AND WIRING FORMATION METHOD |
| 摘要 |
PURPOSE:To achieve a wiring structure with a less surface roughness by inclining the <111> axis of aluminum alloy crystal constituting an aluminum alloy layer at an angle in a certain range to the normal line of a barrier metal layer on an insulation layer. CONSTITUTION:A barrier metal layer 22 of TiN is formed via a contact layer 20 of Ti is formed on an insulation layer 14 formed on a substrate 10 and further aluminum alloy layer 30 is formed on it. The <111> axis L of Al alloy crystal constituting the Al alloy layer 30 is inclined by 0-5 degrees to the normal line L of the barrier metal layer 22 on the insulation layer 14. This configuration achieves a wiring structure with a less surface roughness.
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| 申请公布号 |
JPH07130855(A) |
申请公布日期 |
1995.05.19 |
| 申请号 |
JP19930302344 |
申请日期 |
1993.11.08 |
| 申请人 |
SONY CORP |
发明人 |
HOSHINO KAZUHIRO;MIYAMOTO TAKAAKI |
| 分类号 |
H01L21/28;H01L21/203;H01L21/205;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L29/43;(IPC1-7):H01L21/768;H01L21/320 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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