发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device whose heat radiating property is superior and a method for manufacturing this device, without generating warpages of a metallic radiator or cracks of a ceramic frame body. SOLUTION: A semiconductor element 2 is loaded on the upper face of a metallic radiator 1 formed by jointing copper plates 12 with the both upper and lower faces of a molybdenum plate 11. A cover body 4 is jointed with a ceramic frame body 3 arranged on the upper face of the metallic radiator 1, and the semiconductor element 2 is airtightly sealed in air. The metallic radiator 1 is formed by forming a through-hole in the molybdenum plate 11, inserting a metallic piece 14, such as copper whose thermal conductivity is high into the through-hole, overlapping the copper plates 12 through silver solder 6 on the both upper and lower faces of the molybdenum plate 11, and then cooling it, and brazing the molybdenum plate 11, the copper plates 12, and the copper piece 14.
申请公布号 JP2000183222(A) 申请公布日期 2000.06.30
申请号 JP19980357503 申请日期 1998.12.16
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 YAMASHITA HIROTO
分类号 H01L23/12;H01L23/373;(IPC1-7):H01L23/12 主分类号 H01L23/12
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