| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a carbon nanotube by which the highly purified carbon nanotube can be easily grown from graphite or a carbon lump with high density plasma. SOLUTION: The carbon nanotube is grown on a substrate 11 with a >=1011 cm-3 high density plasma chemical vapor deposition method, a step of growing the carbon nanotube film having a prescribed thickness on the substrate 11 with the vapor deposition plasma and a step of purifying the carbon nanotube film with etching plasma are repeated and a gas containing a halogen element, concretely CF4 gas, is used as a source gas in the step using the etching plasma.
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