发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RECORDER
摘要 PROBLEM TO BE SOLVED: To increase an MR ratio by increasing the fixing force of a pinned layer and by increasing the contact area of a free layer with a nonmagnetic layer regarding a magnetoresistance effect element and a magnetic recorder. SOLUTION: As the free layer 4 in the magnetoresistance effect element comprising a laminated structure which is composed of an antiferromagnetic layer 1, the pinned layer 2, the nonmagnetic layer 3 and the free layer 4, a granular layer in which magnetic particles 5 are dispersed into a nonmagnetic matrix 6 is used. As the pinned layer 2, a single-phase ferromagnetic layer is used.
申请公布号 JP2002329904(A) 申请公布日期 2002.11.15
申请号 JP20010134832 申请日期 2001.05.02
申请人 FUJITSU LTD 发明人 SUGAWARA TAKAHIKO
分类号 G01R33/09;G11B5/39;H01F10/32;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/09
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