| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device according to an embodiment includes a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn), a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn), an electrode; and an insulating layer disposed between the first region and the electrode. |
| 申请公布号 |
US2016218224(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615002002 |
申请日期 |
2016.01.20 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Ota Kensuke;Irisawa Toshifumi;Saitoh Masumi;Sakuma Kiwamu |
| 分类号 |
H01L29/786;H01L21/324;H01L21/306;H01L29/66;H01L29/49 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn); a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn); an electrode; and an insulating layer disposed between the first region and the electrode. |
| 地址 |
Minato-ku JP |
