| 摘要 |
<p>A process control method to monitor ion implantation process conditions by measuring (12) the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration (18) of ions implanted into the semiconductor substrate.</p> |
