METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR CONTROLLING UNIFORMLY REMAINING THICKNESS OF PLANARIZED PRE-METAL INSULATING LAYER

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to control uniformly the remaining thickness of a planarized pre-metal insulating layer by detecting an end point of a planarization using the difference of reflectivity between a nitride layer and an oxide layer. CONSTITUTION: A predetermined structure is formed within an active region of a silicon substrate. A pre-metal insulating layer is deposited thereon(S11). A nitride based insulating layer is deposited on the pre-metal insulating layer(S13). An oxide layer is deposited on the nitride based insulating layer(S14). The oxide layer is planarized until the nitride based insulating layer of an element dense region is detected(S15). At this time, the nitride based insulating layer is capable of being detected by using the difference of reflectivity between the oxide layer and the nitride based insulating layer. The nitride based layer of the element dense region and the oxide layer of an element sparse region are removed therefrom by performing a planarizing process for a pre-setting period(S16).