Semiconductor apparatus and manufacturing method of the same

摘要

A semiconductor apparatus comprises a first semiconductor device and a second semiconductor device. The first semiconductor device includes: a semiconductor layer having a p-type channel area; an n-type source area, and an n-type drain area; a first gate insulating film provided on the p-type channel area; and a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen. The second semiconductor device includes: a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area; a second gate insulating film provided on the n-type channel area; and a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen. A nitrogen content of the second gate electrode is higher than a nitrogen content of the first gate electrode.