发明名称 |
INSULATED GATE SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A method for manufacturing an insulated gate switching device is provided. The method includes: forming a first trench in a surface of a first SiC semiconductor layer; implanting p-type impurities into a bottom surface of the first trench; depositing a second SiC semiconductor layer on an inner surface of the first trench to form a second trench; and forming a gate insulating layer, a gate electrode, a first region and a body region so that the gate insulating layer covers an inner surface of the second trench, the gate electrode is located in the second trench, the first region is of n-type and in contact with the gate insulating layer, the body region is of p-type, separated from the implanted region, and in contact with the gate insulating layer under the first region. |
申请公布号 |
WO2016199390(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
WO2016JP02704 |
申请日期 |
2016.06.03 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION |
发明人 |
TAKAYA, Hidefumi;MIZUNO, Shoji;WATANABE, Yukihiko;AOI, Sachiko |
分类号 |
H01L21/336;H01L29/06;H01L29/12;H01L29/423;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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