METHODS FOR PREPARING QUANTUM DOTS WITH INSULATOR COATINGS

摘要

A method of fabricating a semiconductor structure comprises forming a quantum dot. An insulator layer of silica is then formed encapsulating the quantum dot to create a coated quantum dot, using a reverse micelle sol-gel reaction. In one embodiment, the reverse micelle sol-gel reaction includes dissolving the quantum dot in a first non-polar solvent to form a first solution, adding the first solution to a second solution having a surfactant dissolved in a second non-polar solvent; and adding sodium silicate, potassium silicate, or lithium silicate to the second solution.

主权项

1. A method of fabricating a semiconductor structure, comprising:
forming a quantum dot; and forming an insulator layer of silica encapsulating the quantum dot to create a coated quantum dot, using a reverse micelle sol-gel reaction, wherein the reverse micelle sol-gel reaction includes:
dissolving the quantum dot in a first non-polar solvent to form a first solution;adding the first solution to a second solution having a surfactant dissolved in a second non-polar solvent; andadding ammonium hydroxide and tetraorthosilicate (TEOS) to the second solution.