摘要 |
<p>PROBLEM TO BE SOLVED: To provide a resistance heat generating element whose heat generating property is superior during intermittent excitation, durability is high, and which can be made compact. SOLUTION: A resistance film 4, made of Ta-SiO2 -based cermet and paired terminal electrode films 6A and 6B, which are connected with the resistive film 4 and connects it electrically to a power supply are formed on the surface of an insulation substrate 2, and a protective film 8 is formed thereon so as to cover the resistive film 4 and terminal electrode films 6A and 6B. The resistive film 4 is 0.1 to 2.0μm in thickness, its Ta content is 0.52 or lower and 0.46 or higher and it has a negative resistance temperature coefficient. The resistive film 4 having a negative resistance temperature coefficient controls the ratio of Ta to SiO2 which is used as a sputtering target, by controlling the partial pressure of Ar gas used in sputtering.</p> |