| 摘要 |
A thin film transistor substrate and a method for manufacturing the same are provided to simplify a structure and a manufacturing process and to reduce a manufacturing cost by forming a thin film transistor array substrate with three mask processes without a lift off process or a pad open process. A thin film transistor substrate includes a gate line(102), a data line(104), a thin film transistor(130), a pixel electrode(122), and a semiconductor protection layer(120). The gate line(102) is formed on a substrate. A data line(104) forms a pixel region by intersecting between the gate line(102) and a gate insulation pattern. The thin film transistor(130) is formed on a crossing part between the gate line(102) and the data line(104), and has a semiconductor pattern which forms a channel. The pixel electrode is formed by a gate metallic film which is stacked on a side of a transparent conductive membrane and the transparent conductive membrane in a pixel region. The semiconductor protection layer(120) is formed on the semiconductor pattern in response to the channel. |
