| 发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a base substrate and a MEMS structure. The base substrate comprises a CMOS structure. The MEMS structure is formed on the base substrate adjacent to the CMOS structure. The MEMS structure is connected to the CMOS structure. The MEMS structure comprises a membrane and a backplate. The base substrate has a cavity corresponding to the MEMS structure. |
| 申请公布号 |
US2016229692(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201514643183 |
申请日期 |
2015.03.10 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Yuan-Sheng;Hsu Chang-Sheng;Lin Meng-Jia;Li Shih-Wei;Chen Yan-Da |
| 分类号 |
B81C1/00;B81B3/00 |
主分类号 |
B81C1/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a base substrate comprising a CMOS structure; and a MEMS structure formed on the base substrate adjacent to the CMOS structure, wherein the MEMS structure is connected to the CMOS structure, and the MEMS structure comprises:
a membrane made of doped polysilicon; anda backplate; wherein the base substrate has a cavity corresponding to the MEMS structure. |
| 地址 |
Hsinchu TW |
