CYCLIC SPACER ETCHING PROCESS WITH IMPROVED PROFILE CONTROL

摘要

Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

主权项

1. A method of patterning a substrate, comprising:
positioning a substrate having one or more mandrel structures and a spacer material formed thereon in a processing chamber, wherein the spacer material is a layer formed over the mandrel structures; exposing the spacer material to an inert plasma to modify one or more regions of the spacer material; exposing the modified regions of the spacer material to an etchant plasma to remove a portion of the spacer material; and repeating the exposing the spacer material to an inert plasma and the exposing the modified regions of the spacer material to an etchant plasma until a portion of the mandrel structure is exposed.