SEMICONDUCTOR MULTILAYER STRUCTURE AND FABRICATION METHOD THEREOF

摘要

The present invention is directed to a semiconductor multilayer structure and fabrication method thereof. A semiconductor multilayer structure comprises a silicon substrate, and a plurality of semiconductor layers, wherein at least one of the semiconductor layers is an aluminum contained nitride layer; and an indium-containing catalyst is utilized to enhance migration of aluminum in the aluminum contained nitride layer. A fabrication method is also disclosed here. By utilizing the indium-containing catalyst and/or gallium-containing catalyst, the aluminum migration can be enhanced to increase quality and flatness of the aluminum contained nitride buffer layer. Furthermore, the costs and energy consumption can be reduced too.

主权项

1. A fabrication method of a semiconductor multilayer structure comprising:
providing a silicon substrate in a reaction chamber; and depositing a plurality of semiconductor layers on the silicon substrate, wherein at least one of the semiconductor layers is an aluminum contained nitride layer, and an indium-containing catalyst is introduced into the chamber to enhance migration of aluminum in the aluminum contained nitride layer during depositing the aluminum contained nitride layer.