| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which can ensure adhesion between an electrode film which forms ohmic contact with a SiC semiconductor part and a wiring film which is laminated on the electrode film.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises the step of: forming on a surface of a SiC semiconductor part 1, a surface electrode film 4 composed of lamination of a first electrode film 2 composed of nickel and a second electrode film 3 composed of nickel, silicon and tantalum. A thickness of the first electrode film 2 is not less than 3 nm and not more than 10 nm. A composition of the second electrode film is within a range from 60 Ni30Si10Ta to 53 Ni27Si20Ta. The silicon carbide semiconductor device manufacturing method further comprises the step of reacting the SiC semiconductor part 1 and the first electrode film 2 by a heat treatment to create a nickel silicide film to form ohmic contact. At this time, a surplus carbide atom isolated from the SiC semiconductor part 1 is poorly deposited on a surface of the surface electrode film 4, since the surplus carbide is bound with a tantalum atom in the second electrode film 3 to be silicided. The silicon carbide semiconductor device manufacturing method further comprises the step of forming a wiring film on a surface of the surface electrode film 4.SELECTED DRAWING: Figure 2 |
