发明名称 |
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF |
摘要 |
Thermal resistance is reduced from an element surface of a semiconductor chip to the rear surface of a semiconductor package. Split patterning of a metal is easily carried out, stress produced by a thermal expansion coefficient between silicon and metal is significantly reduced and environment reliability is improved. Low cost is realized by manufacturing a semiconductor package without using a TIM material. A semiconductor package is provided including a semiconductor chip including a first surface and a second surface opposed to the first surface and covered with a resin, an electrode being arranged over the first surface, a first wiring connected to the first surface directly or via a first opening arranged in the resin, and a second wiring connected to the second surface via a second opening arranged in the resin. |
申请公布号 |
US2016300779(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615089630 |
申请日期 |
2016.04.04 |
申请人 |
J-DEVICE CORPORATION |
发明人 |
WATANABE Shinji;Iwasaki Toshihiro;Tamakawa Michiaki |
分类号 |
H01L23/373;H01L25/065;H01L21/56;H01L25/00;H01L23/538;H01L21/48 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor package comprising:
a semiconductor chip including a first surface and a second surface opposed to the first surface and covered with a resin, an electrode arranged over the first surface; a first wiring connected to the first surface directly or via a first opening arranged in the resin; and a second wiring connected to the second surface via a second opening arranged in the resin. |
地址 |
Oita JP |