发明名称 SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
摘要 Thermal resistance is reduced from an element surface of a semiconductor chip to the rear surface of a semiconductor package. Split patterning of a metal is easily carried out, stress produced by a thermal expansion coefficient between silicon and metal is significantly reduced and environment reliability is improved. Low cost is realized by manufacturing a semiconductor package without using a TIM material. A semiconductor package is provided including a semiconductor chip including a first surface and a second surface opposed to the first surface and covered with a resin, an electrode being arranged over the first surface, a first wiring connected to the first surface directly or via a first opening arranged in the resin, and a second wiring connected to the second surface via a second opening arranged in the resin.
申请公布号 US2016300779(A1) 申请公布日期 2016.10.13
申请号 US201615089630 申请日期 2016.04.04
申请人 J-DEVICE CORPORATION 发明人 WATANABE Shinji;Iwasaki Toshihiro;Tamakawa Michiaki
分类号 H01L23/373;H01L25/065;H01L21/56;H01L25/00;H01L23/538;H01L21/48 主分类号 H01L23/373
代理机构 代理人
主权项 1. A semiconductor package comprising: a semiconductor chip including a first surface and a second surface opposed to the first surface and covered with a resin, an electrode arranged over the first surface; a first wiring connected to the first surface directly or via a first opening arranged in the resin; and a second wiring connected to the second surface via a second opening arranged in the resin.
地址 Oita JP