发明名称 PATTERN FORMING SYSTEM AND SUBSTRATE PROCESSING SYSTEM
摘要 A pattern forming system includes: a forming device configured to form a pattern by etching a film on a substrate in a processing vessel; a member in the processing vessel that is positioned in the processing vessel to increase uniformity of the pattern in a surface of the substrate; a measurement apparatus configured to measure a shape or a critical dimension of the pattern; a control device configured to control a temperature of the member in the processing vessel; a processing gas supply unit configured to introduce a processing gas to the processing vessel; and an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level. The control device is configured to control the temperature of the member in the processing vessel based on the measured shape or the measured critical dimension of the pattern through a feedback control.
申请公布号 US2016300698(A1) 申请公布日期 2016.10.13
申请号 US201615185559 申请日期 2016.06.17
申请人 Tokyo Electron Limited 发明人 Tanaka Keisuke;Sawai Kazuo;Nagahata Hiroshi
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A pattern forming system comprising: a forming device configured to form a pattern by etching a film on a substrate in a processing vessel; a member in the processing vessel that is positioned in the processing vessel to increase uniformity of the pattern in a surface of the substrate; a measurement apparatus configured to measure a shape or a critical dimension of the pattern; a control device configured to control a temperature of the member in the processing vessel; a processing gas supply unit configured to introduce a processing gas to the processing vessel; and an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level, wherein the control device is configured to control the temperature of the member in the processing vessel based on the measured shape or the measured critical dimension of the pattern through a feedback control.
地址 Tokyo JP