Multiple Line Width Electromigration Test Structure and Method

摘要

Apparatus and methods pertaining to examining electromigration lifespan are disclosed. In one aspect, a method of manufacturing is provided that includes forming a test structure on a semiconductor substrate. The test structure includes a first conductor structure that has a first cross-sectional area and a second conductor structure that has a second cross-sectional area larger than the first cross-sectional area. Current is flowed through the first and second conductor structures at current densities sufficient to cause electromigration in the first and second conductor structures. The current is monitored for drops indicative of electromigration failure of one or both of the first and second conductor structures. The time elapsed before the failure of the one or both of the conductor structures is recorded.