| 发明名称 | Memory device | ||
| 摘要 | A memory device includes n (n being an integer of 2 or more) resistance change films being series connected to each other. Each of the resistance change films is a superlattice film in which plural pairs of a first crystal layer made of a first compound and a second crystal layer made of a second compound are alternately stacked. An average composition of the entire resistance change film or an arrangement pitch of the first crystal layers and the second crystal layers are mutually different among the n resistance change films. | ||
| 申请公布号 | US9384829(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201313847677 | 申请日期 | 2013.03.20 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Furuhashi Hironobu;Kunishima Iwao;Shuto Susumu;Asao Yoshiaki;Sudo Gaku |
| 分类号 | G11C13/00;H01L45/00;G11C11/56;H01L27/24 | 主分类号 | G11C13/00 |
| 代理机构 | Holtz, Holtz & Volek PC | 代理人 | Holtz, Holtz & Volek PC |
| 主权项 | 1. A memory device comprising n (n being an integer of 2 or more) resistance change films being series connected to each other, each of the resistance change films being a superlattice film in which a plurality of pairs of a first crystal layer made of a first compound and a second crystal layer made of a second compound are alternately stacked, and an average composition of the entire resistance change film or an arrangement pitch of the first crystal layers and the second crystal layers being mutually different among the n resistance change films. | ||
| 地址 | Tokyo JP | ||