| 发明名称 |
Techniques for Spin-on-Carbon Planarization |
| 摘要 |
Systems and methods for SOC planarization are described. In an embodiment, an apparatus for SOC planarization includes a substrate holder configured to support a microelectronic substrate. Additionally, the apparatus may include a light source configured to emit ultraviolet (UV) light toward a surface of the microelectronic substrate. In an embodiment, the apparatus may also include an isolation window disposed between the light source and the microelectronic substrate. Also, the apparatus may include a gas distribution unit configured to inject gas in a region between the isolation window and the microelectronic substrate. Furthermore, the apparatus may include an etchback leveling component configured to reduce non-uniformity of a UV light treatment of the microelectronic substrate. |
| 申请公布号 |
US2016358786(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615171188 |
申请日期 |
2016.06.02 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Hooge Joshua S.;Rathsack Benjamen M.;Carcasi Michael A.;Somervell Mark H.;Brown Ian J.;Printz Wallace P. |
| 分类号 |
H01L21/3105;H01L21/027;H01L21/02;H01L21/311;H01L21/67;H01L21/68 |
主分类号 |
H01L21/3105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a substrate holder configured to support a microelectronic substrate; a light source configured to emit ultraviolet (UV) light toward a surface of the microelectronic substrate; an isolation window disposed between the light source and the microelectronic substrate; a gas distribution unit configured to inject gas in a region between the isolation window and the microelectronic substrate; and an etchback leveling component configured to reduce non-uniformity of a UV light treatment of the microelectronic substrate. |
| 地址 |
Tokyo JP |
