| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method for improving the light emitting property of a semiconductor element by uniforming distortion to be applied to a light emitting layer. SOLUTION: The semiconductor element manufacturing method comprises: a step of forming semiconductor element layers 8 each including a ridge portion 7 on a n-type GaN substrate 1 in element formation regions 25 adjacent to each other in the direction of a resonator (A-direction) so that an end 7a of the ridge portion 7 is arranged on a cleavage line 500a and the ridge portion 7 is not continued in the direction of the resonator (A-direction); a step of forming a groove portion 1d in the N-type GaN substrate 1 by applying etching to the n-type GaN substrate 1 to encircle the regions where the semiconductor element layers 8 are formed, prior to the step of forming the semiconductor element layers 8; and a step of mutually dividing the element formation regions 25 where the semiconductor element layers 8 adjacent to each other in the direction of the resonance are formed, along the cleavage line 500a. COPYRIGHT: (C)2009,JPO&INPIT
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