| 发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a fin which comprises long sides and a first short side, a first trench which is immediately adjacent the first short side of the fin and has a first depth, a second trench which is immediately adjacent the first trench and has a second depth greater than the first depth, a first protrusion structure which protrudes from a bottom of the first trench and extends side by side with the first short side, and a gate which is formed on the first protrusion structure to extend side by side with the first short side. |
| 申请公布号 |
US2016204106(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201614989876 |
申请日期 |
2016.01.07 |
| 申请人 |
YOU Jung-Gun;SUNG Sug-Hyun;PARK Se-Wan |
发明人 |
YOU Jung-Gun;SUNG Sug-Hyun;PARK Se-Wan |
| 分类号 |
H01L27/088;H01L29/423;H01L29/06 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a fin which comprises long sides and a first short side; a first trench that is immediately adjacent the first short side of the fin and has a first depth; a second trench that is immediately adjacent the first trench and has a second depth that is greater than the first depth; a first protrusion structure that protrudes from a bottom of the first trench and extends side by side with the first short side; and a gate that is formed on the first protrusion structure to extend side by side with the first short side. |
| 地址 |
Ansan-si KR |
