Magnetoresistive Tunnel Junction

摘要

A Magnetoresistive Tunnel Junction (MTJ) includes a magnetic reference layer disposed between a first electrode and a resistive layer. The junction also includes a magnetic free layer disposed between the resistive layer and a second electrode. The surface area of the free layer is less than the surface area of the reference layer.

主权项

1. A method for forming a Magnetoresistive Tunnel Junction (MJT), the method comprising:
disposing a magnetic, substantially circular reference layer on a first electrode; disposing a resistive layer onto the reference layer; disposing a magnetic, substantially circular free layer on the resistive layer; and disposing a second electrode so as to be connected to the free layer; wherein the reference layer produces a first magnetic core in a first direction, and the free layer produces a second magnetic core in a second direction, different from the first direction.