| 发明名称 |
Wavelength converting device having an epitaxial waveguide layer |
| 摘要 |
A wavelength converting device comprises: a substrate; an epitaxial cladding layer of K3Li2-xNb5+x-yTayO15+2x (-0.4</=x</=0.20, 0</=y</=0.33) deposited on the substrate by metalorganic compound gases including lithium, potassium, tantalum and niobium respectively by using a MOCVD method; and an epitaxial waveguide layer of K3Li2-x'Nb5+x'-y'Tay'O15+2x' (-0.4</=x'</=0.20, 0</=y'</=0.33, x+0.0005</=x'</=x+0.005 and x' NOTEQUAL x) deposited on the epitaxial cladding layer by metalorganic compound gases including lithium, potassium, tantalum and niobium respectively by using the MOCVD method and having a refractive index larger than that of the epitaxial cladding layer thereby operat-able with a high thermal and electrical stability and a high output even when driven by a high load optical power.
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| 申请公布号 |
US5581396(A) |
申请公布日期 |
1996.12.03 |
| 申请号 |
US19950491620 |
申请日期 |
1995.06.19 |
| 申请人 |
PIONEER ELECTRONIC CORPORATION |
发明人 |
KUBOTA, HIROFUMI;CHIKUMA, KIYOFUMI |
| 分类号 |
G02F1/37;G02B6/13;G02F1/35;G02F1/377;H01S3/06;H01S3/109;(IPC1-7):G02F1/35 |
主分类号 |
G02F1/37 |
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