| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture one mask for providing a fine pattern by using two separated lithography processes. <P>SOLUTION: A method for forming a fine pattern of a semiconductor device includes: a step of providing a semiconductor substrate containing especially a layer to be etched; a step of forming a first photoresist pattern at the upper portion of the layer to be etched; a step of generating an acid in the first photoresist pattern by exposing the first photoresist pattern to light; a step of allowing the first photoresist pattern to be insensitive to light by breaching the first photoresist pattern; a step of forming the layer to be etched, and a second photoresist at the upper portion of the first photoresist pattern, or the like that becomes insensitive to light; and a step of forming the second photoresist pattern by exposing the second photoresist to light. The method is a technique for integrating the device and improving a yield by providing the first and second photoresist patterns at the upper portion of the layer to be etched. <P>COPYRIGHT: (C)2008,JPO&INPIT |
