| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor nonvolatile memory device which restrains interference effect between cells and realizes highly reliable high integration, and to provide its manufacturing method. SOLUTION: The nonvolatile semiconductor memory device consists of a semiconductor substrate 100; a floating gate which is provided to the upper part of the semiconductor substrate via a tunnel insulating film 120 thereon, and consists of a second conductive layer 140 connected to a first conductive layer 130 and an upper part of the first conductive layer; an interelectrode insulating film 150 formed in an upper part of the floating gate; and a control gate 160 formed in an upper part of the interelectrode insulating film. In the second conductive layer 140, both a width in a cross-section along the widthwise direction of the control gate 160, and a width in a cross section along a longitudinal direction of the control gate 160, are narrower than the width of the first conductive layer 130. COPYRIGHT: (C)2007,JPO&INPIT
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