MEMORY DEVICES HAVING RESISTANCE PROPERTY CAPABLE OF BEING INDEPENDENTLY CONTROLLED BY ELECTRIC AND MAGNETIC FIELDS AND METHODS OF OPERATING THE SAME

摘要

A memory device having a resistance property controlled independently by electric and magnetic fields and an operating method thereof are provided to store a plurality of information data in one information storage body by using a plurality of resistance levels. A memory device includes one or more first wiring, one or more second wiring crossing the first wiring, and one or more information storage bodies disposed at an intersection between the first and second wirings. Each of the information storage bodies includes a first electrode and a second electrode disposed between the first and second wirings, and a first insulating layer disposed between the first and second electrodes. The first insulating layer has an electric field-dependent resistance property controlled by voltages applied to the first and second electrodes, and a magnetic field-dependent resistance property determined by magnetic polarization directions of the first and second electrodes. The memory device further includes a first circuit(310) for controlling the electric field-dependent resistance property of the first insulating layer and a second circuit(320) for controlling the magnetic field-dependent resistance property of the first insulating layer.