Edge electrode for characterization of semiconductor wafers

摘要

A conductive conformable braided wire is used as the edge electrode for material characterization of a semiconductor wafer. The braided wire is adapted to contact the perimeter of the n-GaN layer using a retractable support structure that alternately places the electrode in contact with the edge of the n-GaN layer and retracts it during repeated cycles of operation to test a plurality of similar wafers. The braided wire produced a very stable and higher electrical contact than any prior-art edge electrode.

主权项

1. A conductive edge electrode for characterizing a semiconductor material, comprising:
a conductive conformable electrode adapted to contact a perimeter of a layer of the semiconductor material; and a support structure adapted to place the electrode in contact with said layer and to separate the electrode from the layer for repeated cycles of operation with a plurality of samples; wherein, during each of said repeated cycles of operation, said contact of the electrode is stationary in relation to the layer of semiconductor material.