发明名称 Semiconductor device and structure therefor
摘要 In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
申请公布号 US9460995(B2) 申请公布日期 2016.10.04
申请号 US201514939873 申请日期 2015.11.12
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 Salih Ali;Liu Chun-Li;Grivna Gordon M.
分类号 H01L29/49;H01L23/522;H01L29/66;H01L29/778;H01L21/768;H01L23/498;H01L21/78;H01L23/482;H01L23/532;H01L29/20;H01L21/683;H01L23/00 主分类号 H01L29/49
代理机构 代理人 Hightower Robert F.
主权项 1. A HEMI semiconductor device comprising: a first plurality of via structures overlying a plurality of first current carrying electrodes of the HEMI semiconductor device, the first plurality of via structures having a first via conductor electrically coupled to the plurality of first current carrying electrodes; a second plurality of via structures overlying a plurality of second current carrying electrodes of the HEMI semiconductor device, the second plurality of via structures having a second via conductor electrically coupled to the plurality of second current carrying electrodes; an organic insulator overlying at least a portion of the plurality of first and current carrying electrodes wherein the plurality of first and second via structures extend through the organic insulator; a first conductor extending to electrically contact the first plurality of via structures wherein the first conductor is substantially planar at least in regions between each via structure of the first plurality of via structures and that is a solderable conductor material that is suitable for plating onto the HEMI semiconductor device; a second conductor extending to electrically contact the second plurality of via structures wherein the second conductor is substantially planar at least in regions between each via structure of the second plurality of via structures and is a solderable conductor material that is suitable for plating onto the HEMI semiconductor device; a first connector attached to the first conductor wherein the first connector overlies at least a portion of an active region of the HEMT semiconductor device; and a second connector attached to the second conductor.
地址 Phoenix AZ US