Verfahren und deren Maske zur Musterherstellung in einer Polymerschicht

摘要

A method and system for fabricating micron and sub-micron-sized features within a polymer layer (402, 502) of a nascent semiconductor device or other micro-device or nano-device. Small features are directly imprinted with an optical-mechanical stamp (403, 503) having corresponding intrusions (204 - 207). Large features are created by exposing the surface of selected areas of the polymer surface (411, 520) to UV radiation by transmitting UV radiation through the optical-mechanical stamp to chemically alter the polymer, allowing either UV-exposed or UV-shielded areas to be removed by solvents. Thus, described embodiments of the present invention provide for a partially transparent imprinting mask that employs purely mechanical stamping for fine features and lithography-like chemical polymer removal for large features.