发明名称 Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
摘要 The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
申请公布号 US9477040(B1) 申请公布日期 2016.10.25
申请号 US201514801257 申请日期 2015.07.16
申请人 Sandia Corporation 发明人 Skogen Erik J.
分类号 H01L31/0232;G02B6/132;H01L31/18;H01L31/0352;G02B6/134;G02B6/12 主分类号 H01L31/0232
代理机构 代理人 Talwar Aman
主权项 1. A method of fabricating an integrated structure, the method comprising: providing a base structure comprising a multiple-quantum-well (MQW) region and a photodiode region; patterning a top surface of the base structure with a mask to define an active region and a passive region; introducing impurities, creating vacancies, or heating through the photodiode region and into the MQW region, thereby producing an intermixed MQW region; and depositing one or more cladding layers on the photodiode region.
地址 Albuquerque NM US