发明名称 |
Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof |
摘要 |
The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process. |
申请公布号 |
US9477040(B1) |
申请公布日期 |
2016.10.25 |
申请号 |
US201514801257 |
申请日期 |
2015.07.16 |
申请人 |
Sandia Corporation |
发明人 |
Skogen Erik J. |
分类号 |
H01L31/0232;G02B6/132;H01L31/18;H01L31/0352;G02B6/134;G02B6/12 |
主分类号 |
H01L31/0232 |
代理机构 |
|
代理人 |
Talwar Aman |
主权项 |
1. A method of fabricating an integrated structure, the method comprising:
providing a base structure comprising a multiple-quantum-well (MQW) region and a photodiode region; patterning a top surface of the base structure with a mask to define an active region and a passive region; introducing impurities, creating vacancies, or heating through the photodiode region and into the MQW region, thereby producing an intermixed MQW region; and depositing one or more cladding layers on the photodiode region. |
地址 |
Albuquerque NM US |