PASSIVATION OF METALLIC IMPURITIES IN A SINGLE CRYSTALLINE REGION BY HYDROGENATION

摘要

Substrate comprising at least a single-crystalline silicon region having a thickness between two opposite faces, characterized in that said region has, in a vertical cross-section plan, a hydrogen rich zone which extends from at least a surface of one of the two opposite faces, in the vertical direction over at least 50 % of the thickness of said single crystalline region, and in which the average dislocation density is greater than or equal to 103 cm-2, and characterized in that a part of the surface of one of the two opposite faces of the said region facing to the hydrogen rich zone comprises strain high areas separated by a strain low area, the distance between two successive strain high areas being comprised between 5 μm and 50% of said thickness of said single crystalline silicon region.