发明名称 |
SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE |
摘要 |
A highly reliable semiconductor device. In a configuration where a precharged source line is discharged to a bit line by establishing electrical continuity between the source line and the bit line through a transistor to read a potential retained at a gate of the transistor, the potential of the bit line is switched in accordance with a change in potential of the source line due to the discharge. With this configuration, the voltage between the source and drain of the transistor can be kept lower than a predetermined voltage by discharge. Accordingly, the source-drain voltage of the transistor can be kept lower than its breakdown voltage, so that the semiconductor device can have high reliability. |
申请公布号 |
US2016218061(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201615090733 |
申请日期 |
2016.04.05 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
MATSUZAKI Takanori;INOUE Hiroki |
分类号 |
H01L23/528;H01L27/12;H01L29/786 |
主分类号 |
H01L23/528 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |