发明名称 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
摘要 A highly reliable semiconductor device. In a configuration where a precharged source line is discharged to a bit line by establishing electrical continuity between the source line and the bit line through a transistor to read a potential retained at a gate of the transistor, the potential of the bit line is switched in accordance with a change in potential of the source line due to the discharge. With this configuration, the voltage between the source and drain of the transistor can be kept lower than a predetermined voltage by discharge. Accordingly, the source-drain voltage of the transistor can be kept lower than its breakdown voltage, so that the semiconductor device can have high reliability.
申请公布号 US2016218061(A1) 申请公布日期 2016.07.28
申请号 US201615090733 申请日期 2016.04.05
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 MATSUZAKI Takanori;INOUE Hiroki
分类号 H01L23/528;H01L27/12;H01L29/786 主分类号 H01L23/528
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP