发明名称 |
Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof |
摘要 |
An N type field effect transistor having a higher resistivity to hot carriers and exhibiting a higher current handling capability even when used at a low gate voltage, and a method of manufacturing such a transistor are provided. A nitrided oxide film is formed on a drain avalanche hot carrier injection region. The nitrided oxide film is highly resistive to drain avalanche hot carriers as compared to a silicon oxide film. The silicon oxide film is formed on a channel hot electron injection region. The silicon oxide film is highly resistive to channel hot electrons as compared to the nitrided oxide film. A major portion of a gate insulator film is a silicon oxide film. The silicon oxide film exhibits a higher current handling capability at a low gate voltage as compared to the nitrided oxide film.
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申请公布号 |
US5369297(A) |
申请公布日期 |
1994.11.29 |
申请号 |
US19920930932 |
申请日期 |
1992.08.18 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUSUNOKI, SHIGERU;INUISHI, MASAHIDE |
分类号 |
H01L21/266;H01L21/28;H01L21/314;H01L21/336;H01L29/51;H01L29/78;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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