| 发明名称 | Method of manufacturing thin film transistor and method of manufacturing display substrate having the same | ||
| 摘要 | A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer. | ||
| 申请公布号 | US9412771(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201514793966 | 申请日期 | 2015.07.08 |
| 申请人 | Samsung Display Co., Ltd. | 发明人 | Koo Soyoung;Kim Myounghwa;Park Sangho;Lim Jun Hyung;Kano Masataka |
| 分类号 | H01L21/00;H01L27/12;H01L29/66;H01L21/02;H01L21/477;H01L29/24 | 主分类号 | H01L21/00 |
| 代理机构 | Knobbe Martens Olson & Bear LLP | 代理人 | Knobbe Martens Olson & Bear LLP |
| 主权项 | 1. A method of manufacturing a thin film transistor for a display device, comprising: forming an oxide semiconductor layer on a substrate; plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer; and annealing the plasma-treated oxide semiconductor layer to form a channel layer. | ||
| 地址 | Gyeonggi-do KR | ||