| 摘要 |
A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film. |
| 主权项 |
1. A method of manufacturing a photoelectric conversion device, the method comprising:
forming, with a material which contains aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter; forming, on the electrically conductive pattern, an insulating film which contains hydrogen; performing, in a hydrogen-containing atmosphere, first annealing on a structure including the semiconductor substrate, the electrically conductive pattern, and the insulating film; forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing; and performing, in the hydrogen-containing atmosphere, second annealing on a structure including the semiconductor substrate, the electrically conductive pattern, the insulating film, and the protective film after formation of the protective film, wherein a temperature in the first annealing is not less than a temperature when forming the insulating film and not more than a temperature when forming the protective film. |
